Beschreibung
F415MR12W2M1B76BOMA1 Infineon
Description: This is SiC N-Channel MOSFET Module 75 A 1200 V AG-EASY1B-2 manufactured by Infineon. The manufacturer part number is F415MR12W2M1B76BOMA1. It has a maximum of 1200 v drain source voltage. While 75 a of maximum continuous drain current. The product is available in screw mount configuration. The product f4, is a highly preferred choice for users. The transistor is manufactured from highly durable sic material. The product carries 5.55v of maximum gate threshold voltage. The package is a sort of ag-easy2b. It consists of 4 elements per chip. The product is available in [Cannel Type] channel. It provides up to 0.015 ω maximum drain source resistance.
Weight: 0.1kg
SKU: F415MR12W2M1B76BOMA1
Delivery: We ship via global express services, such as DHL, Fedex, Swiss Post.
Warranty: 3 Years AW warranty, for peace of mind.