Descripción
IRL8113PBF Infineon
Description: This is N-channel MOSFET 105 A 30 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRL8113PBF. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 23 nc @ 4.5 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 110 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 1.35v. The product carries 2.25v of maximum gate threshold voltage. It provides up to 6 mω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 105 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 8.77mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
Weight: 0.1kg
SKU: IRL8113PBF
Delivery: We ship via global express services, such as DHL, Fedex, Swiss Post.
Warranty: 3 Years AW warranty, for peace of mind.